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NTDV5804NT4G-VB Product details

Product introduction:

Product Introduction
NTDV5804NT4G-VB is a high-performance N-channel MOSFET in TO252 package, suitable for a variety of power management and switching applications. Its features include low on-resistance and high current carrying capacity, which can effectively reduce power consumption and improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Model**: NTDV5804NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology

Domain and module applications:

Application fields and modules: NTDV5804NT4G-VB is widely used in switching power supplies, DC-DC converters, motor drives and battery management systems. Its low on-resistance makes it particularly suitable for high-efficiency power supply design, and it also performs well in consumer electronics, automotive electronics and industrial control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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