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NTD95N02RT4G-VB Product details

Product introduction:

NTD95N02RT4G-VB Product Introduction
NTD95N02RT4G-VB is a high performance N-type MOSFET in TO252 package, designed for low voltage, high current applications. With its extremely low on-resistance and wide threshold voltage range, the device is ideal for high efficiency power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS**: 20V
- **VGS**: ±20V
- **Threshold voltage(Vth)**: 0.5V ~ 1.5V
- **RDS(ON)**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current(ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Applications and modules: NTD95N02RT4G-VB is widely used in power management, LED drive and motor control. Its low on-resistance and high current capability make it very suitable for efficient DC-DC converters and switching power supplies. This MOSFET can also be used in portable electronic devices, computers and consumer electronics to ensure efficient power conversion and stable working performance to meet diverse application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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