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NTD95N02RG-VB Product details
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NTD95N02RG-VB Product Introduction
NTD95N02RG-VB is a high-performance unipolar N-channel MOSFET in a TO252 package suitable for high current applications. The device has a maximum drain-source voltage (VDS) of 20V and a very low on-resistance (RDS(ON)) of 6mΩ at VGS of 2.5V and 4.5mΩ at VGS of 4.5V. This makes it excel in areas such as power management and motor drive. With a threshold voltage (Vth) range of 0.5V to 1.5V, this MOSFET supports up to 100A of continuous current (ID), suitable for high-efficiency and compact designs.
NTD95N02RG-VB is a high-performance unipolar N-channel MOSFET in a TO252 package suitable for high current applications. The device has a maximum drain-source voltage (VDS) of 20V and a very low on-resistance (RDS(ON)) of 6mΩ at VGS of 2.5V and 4.5mΩ at VGS of 4.5V. This makes it excel in areas such as power management and motor drive. With a threshold voltage (Vth) range of 0.5V to 1.5V, this MOSFET supports up to 100A of continuous current (ID), suitable for high-efficiency and compact designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD95N02RG-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum continuous leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: NTD95N02RG-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum continuous leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management**:
- In power converters, the NTD95N02RG-VB can be used as a switching element, providing high efficiency and low power consumption, suitable for DC-DC converters and battery management systems.
2. **Motor Drive**:
- Due to its high current handling capability and low on-resistance, this MOSFET performs well in motor drive applications and is suitable for motor control and drive circuits.
3. **LED Drive**:
- The device can effectively control the current of LED lighting, ensuring high brightness and low heat output, making it ideal for LED drive circuits.
4. **Power Amplifier**:
- In RF and audio applications, the NTD95N02RG-VB can be used in power amplifier circuits, providing high efficiency and stable output.
5. **Automotive Electronics**:
- This MOSFET is suitable for automotive power management and control modules and can withstand harsh working environments.
From the above introduction and parameter description, it can be seen that NTD95N02RG-VB is a very valuable MOSFET choice in many high-efficiency applications.
1. **Power Management**:
- In power converters, the NTD95N02RG-VB can be used as a switching element, providing high efficiency and low power consumption, suitable for DC-DC converters and battery management systems.
2. **Motor Drive**:
- Due to its high current handling capability and low on-resistance, this MOSFET performs well in motor drive applications and is suitable for motor control and drive circuits.
3. **LED Drive**:
- The device can effectively control the current of LED lighting, ensuring high brightness and low heat output, making it ideal for LED drive circuits.
4. **Power Amplifier**:
- In RF and audio applications, the NTD95N02RG-VB can be used in power amplifier circuits, providing high efficiency and stable output.
5. **Automotive Electronics**:
- This MOSFET is suitable for automotive power management and control modules and can withstand harsh working environments.
From the above introduction and parameter description, it can be seen that NTD95N02RG-VB is a very valuable MOSFET choice in many high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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