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NTD85N02R-001-VB Product details

Product introduction:

Product Introduction
NTD85N02R-001-VB is a high-performance N-channel MOSFET in TO252 package, suitable for various power applications, with extremely low on-resistance and high current carrying capacity, which can effectively improve system efficiency and thermal management performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=2.5V, 4.5mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology

Domain and module applications:

Applications and modules: NTD85N02R-001-VB is widely used in power management systems such as DC-DC converters and motor controllers, especially for low voltage and high current applications. It is also suitable for use in fast switching applications such as consumer electronics and battery management systems to improve energy efficiency and extend equipment life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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