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NTD80N02T4G-VB Product details
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Product Introduction
**NTD80N02T4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage applications. With its extremely low on-resistance and excellent switching characteristics, the device is particularly suitable for high-frequency power management and power conversion applications. The maximum drain-source voltage of NTD80N02T4G-VB is 20V, and the maximum continuous drain current can reach 100A, ensuring its high efficiency and stability under high load conditions.
**NTD80N02T4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage applications. With its extremely low on-resistance and excellent switching characteristics, the device is particularly suitable for high-frequency power management and power conversion applications. The maximum drain-source voltage of NTD80N02T4G-VB is 20V, and the maximum continuous drain current can reach 100A, ensuring its high efficiency and stability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD80N02T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: NTD80N02T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**: NTD80N02T4G-VB is widely used in high-efficiency DC-DC converters and power modules, which can significantly reduce energy loss and improve power conversion efficiency. It is suitable for computers, consumer electronic devices and portable devices.
2. **Motor control**: This MOSFET is suitable for motor drive applications such as home appliances and industrial automation equipment. It can handle high currents and provide excellent control performance.
3. **Automotive electronics**: In automotive power management, NTD80N02T4G-VB can be used for functions such as battery management systems and electric power steering to ensure high efficiency and reliability of the system under various load conditions.
4. **LED lighting**: Due to its fast switching characteristics, this MOSFET is very suitable for LED lighting drivers, improving the efficiency and stability of lighting systems, and is widely used in commercial and home lighting.
5. **Communication equipment**: NTD80N02T4G-VB can be used for power amplification and power management in wireless communication base stations and network equipment to ensure stable operation of the equipment under high load conditions.
With its excellent performance, NTD80N02T4G-VB has become an important component in modern electronic design and is suitable for a variety of application scenarios.
1. **Power management**: NTD80N02T4G-VB is widely used in high-efficiency DC-DC converters and power modules, which can significantly reduce energy loss and improve power conversion efficiency. It is suitable for computers, consumer electronic devices and portable devices.
2. **Motor control**: This MOSFET is suitable for motor drive applications such as home appliances and industrial automation equipment. It can handle high currents and provide excellent control performance.
3. **Automotive electronics**: In automotive power management, NTD80N02T4G-VB can be used for functions such as battery management systems and electric power steering to ensure high efficiency and reliability of the system under various load conditions.
4. **LED lighting**: Due to its fast switching characteristics, this MOSFET is very suitable for LED lighting drivers, improving the efficiency and stability of lighting systems, and is widely used in commercial and home lighting.
5. **Communication equipment**: NTD80N02T4G-VB can be used for power amplification and power management in wireless communication base stations and network equipment to ensure stable operation of the equipment under high load conditions.
With its excellent performance, NTD80N02T4G-VB has become an important component in modern electronic design and is suitable for a variety of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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