中文
English
NTD6600NT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD6600NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a high drain voltage and moderate on-resistance, which makes it have excellent performance in power management and drive circuits, and is suitable for a variety of application scenarios that require efficiency and stability.
NTD6600NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. The device has a high drain voltage and moderate on-resistance, which makes it have excellent performance in power management and drive circuits, and is suitable for a variety of application scenarios that require efficiency and stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD6600NT4G-VB is widely used in power conversion, motor drive and LED lighting. In switching power supplies and DC-DC converters, the design of this MOSFET can help reduce energy loss, improve conversion efficiency and optimize system performance. In power tools and industrial control systems, its high voltage capability enables it to effectively handle high loads, ensuring system reliability and safety. In addition, due to its low on-resistance, the device is suitable for use in high-frequency switching applications, further improving the response speed and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
