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NTD65N03RG-VB Product details
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Product Introduction
**NTD65N03RG-VB** is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage applications. With its ultra-low on-resistance and excellent switching characteristics, the device is particularly suitable for high-frequency power management and power conversion applications. The maximum drain-source voltage of NTD65N03RG-VB is 30V, and the maximum continuous drain current is 100A, ensuring its high efficiency and reliability under high load conditions.
**NTD65N03RG-VB** is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage applications. With its ultra-low on-resistance and excellent switching characteristics, the device is particularly suitable for high-frequency power management and power conversion applications. The maximum drain-source voltage of NTD65N03RG-VB is 30V, and the maximum continuous drain current is 100A, ensuring its high efficiency and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD65N03RG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: NTD65N03RG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management system**: NTD65N03RG-VB is very suitable for high-efficiency DC-DC converters and power modules, which can significantly reduce energy loss and improve power conversion efficiency. It is widely used in computers and consumer electronic devices.
2. **Motor drive**: Due to its high current handling capability, this MOSFET performs well in motor drive applications, suitable for industrial automation equipment and electric vehicles, providing fast response and efficient control.
3. **Automotive electronics**: In automotive power management, NTD65N03RG-VB can be used for battery management systems and electric power steering to ensure the stability and efficiency of the system under various loads.
4. **LED lighting**: The fast switching capability of this MOSFET makes it widely used in LED drive circuits, providing efficient and stable lighting solutions, suitable for commercial and home lighting systems.
5. **Communication equipment**: NTD65N03RG-VB is suitable for power amplification and power management in wireless communication and network equipment, ensuring efficient operation of the equipment under high load conditions.
With its excellent performance and multiple application scenarios, NTD65N03RG-VB has become an important component in modern electronic design.
1. **Power management system**: NTD65N03RG-VB is very suitable for high-efficiency DC-DC converters and power modules, which can significantly reduce energy loss and improve power conversion efficiency. It is widely used in computers and consumer electronic devices.
2. **Motor drive**: Due to its high current handling capability, this MOSFET performs well in motor drive applications, suitable for industrial automation equipment and electric vehicles, providing fast response and efficient control.
3. **Automotive electronics**: In automotive power management, NTD65N03RG-VB can be used for battery management systems and electric power steering to ensure the stability and efficiency of the system under various loads.
4. **LED lighting**: The fast switching capability of this MOSFET makes it widely used in LED drive circuits, providing efficient and stable lighting solutions, suitable for commercial and home lighting systems.
5. **Communication equipment**: NTD65N03RG-VB is suitable for power amplification and power management in wireless communication and network equipment, ensuring efficient operation of the equipment under high load conditions.
With its excellent performance and multiple application scenarios, NTD65N03RG-VB has become an important component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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