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NTD6416AN-1G-VB Product details
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NTD6416AN-1G-VB Product Introduction
NTD6416AN-1G-VB is a high performance N-type MOSFET in TO251 package, designed for low voltage applications. The device has good conduction performance and low on-resistance, suitable for various power management and switching applications.
NTD6416AN-1G-VB is a high performance N-type MOSFET in TO251 package, designed for low voltage applications. The device has good conduction performance and low on-resistance, suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **RDS(ON)**: 110mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single N channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **RDS(ON)**: 110mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD6416AN-1G-VB is widely used in power management, switching power supply, LED drive and motor control. Its low on-resistance and high current carrying capacity make it very suitable for high-efficiency DC-DC converters, inverters and power modules, providing stable output performance on the basis of high efficiency. This MOSFET can also be used in smart home devices and industrial automation systems to meet various application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
