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NTD6415ANT4G-VB Product details

Product introduction:

NTD6415ANT4G-VB Product Introduction
NTD6415ANT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its low on-resistance and high switching speed make it excellent in power management and various high-efficiency circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 40A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ (VGS=4.5V)
- 30mΩ (VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench

Domain and module applications:

Applications and modules
NTD6415ANT4G-VB is suitable for a variety of applications, including power converters, inverters, and battery management systems. Its high voltage and high current handling capabilities make it very useful in power management modules in electric vehicles, renewable energy systems, and industrial equipment. In addition, this MOSFET can also be used for LED driving and motor control to improve the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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