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NTD6415ANLT4G-VB Product details
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Product Introduction
NTD6415ANLT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. With its superior on-resistance and excellent switching characteristics, the device exhibits excellent performance in power management and drive circuits, and is particularly suitable for applications with high requirements for efficiency and reliability.
NTD6415ANLT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high voltage and medium current applications. With its superior on-resistance and excellent switching characteristics, the device exhibits excellent performance in power management and drive circuits, and is particularly suitable for applications with high requirements for efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
NTD6415ANLT4G-VB is widely used in power conversion, motor control and LED lighting. In switching power supplies and DC-DC converters, this MOSFET can significantly improve conversion efficiency, reduce heat loss and optimize overall performance. In electric vehicles and industrial automation, its high voltage and high current handling capabilities ensure system reliability and stability. In addition, the fast switching characteristics of the device also make it very suitable for high-frequency applications, helping to improve system efficiency and response speed.
NTD6415ANLT4G-VB is widely used in power conversion, motor control and LED lighting. In switching power supplies and DC-DC converters, this MOSFET can significantly improve conversion efficiency, reduce heat loss and optimize overall performance. In electric vehicles and industrial automation, its high voltage and high current handling capabilities ensure system reliability and stability. In addition, the fast switching characteristics of the device also make it very suitable for high-frequency applications, helping to improve system efficiency and response speed.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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