中文
English
NTD6414AN-1G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD6414AN-1G-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. With its low on-resistance and good thermal performance, NTD6414AN-1G-VB provides excellent reliability and efficiency in power management, switch control and various power conversion applications.
NTD6414AN-1G-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and medium current applications. With its low on-resistance and good thermal performance, NTD6414AN-1G-VB provides excellent reliability and efficiency in power management, switch control and various power conversion applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 10V: 36mΩ
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 10V: 36mΩ
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD6414AN-1G-VB is widely used in high voltage power management systems such as switching power supplies and DC-DC converters. Due to its excellent on-resistance, NTD6414AN-1G-VB can improve system efficiency and reduce heat generation, suitable for battery management and electric vehicle applications. In addition, this MOSFET is also suitable for modules such as motor drives and load switches that require high voltage and high current, ensuring efficient and reliable operation of the equipment under various working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
