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NTD5P06VT4G-VB Product details
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NTD5P06VT4G-VB Product Introduction
NTD5P06VT4G-VB is a high-performance N-channel MOSFET packaged in TO252 and using advanced Trench technology. The maximum drain-source voltage (VDS) of this device reaches 60V, which is suitable for a variety of power management and conversion applications. Its low on-resistance (RDS(ON)) enables it to maintain good conduction performance at a lower gate-source voltage (VGS), ensuring high efficiency and stability under high current conditions, and is particularly suitable for high-efficiency power supply design and motor control.
NTD5P06VT4G-VB is a high-performance N-channel MOSFET packaged in TO252 and using advanced Trench technology. The maximum drain-source voltage (VDS) of this device reaches 60V, which is suitable for a variety of power management and conversion applications. Its low on-resistance (RDS(ON)) enables it to maintain good conduction performance at a lower gate-source voltage (VGS), ensuring high efficiency and stability under high current conditions, and is particularly suitable for high-efficiency power supply design and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD5P06VT4G-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Model**: NTD5P06VT4G-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
NTD5P06VT4G-VB MOSFET is widely used in many fields. Here are some specific application examples:
1. **Power conversion**: In switching power supplies and DC-DC converters, the low RDS(ON) characteristics of this MOSFET enable it to maintain high efficiency under high load conditions and reduce energy loss.
2. **Motor control**: For DC motor drive circuits, the device can effectively control the current, achieve fast startup and speed regulation, and improve the overall performance of the motor.
3. **LED drive circuit**: NTD5P06VT4G-VB can be used in LED lighting applications to help achieve efficient current regulation and control, and improve the overall efficiency and stability of the system.
4. **Battery management**: In battery charge and discharge management systems, this MOSFET can effectively control the current flow to ensure battery safety and stable performance.
5. **Power Amplifier**: In audio power amplifiers and other power applications, the NTD5P06VT4G-VB provides strong drive capability and low distortion for high-fidelity audio systems.
These application areas demonstrate the importance and wide applicability of the NTD5P06VT4G-VB in modern power electronics.
NTD5P06VT4G-VB MOSFET is widely used in many fields. Here are some specific application examples:
1. **Power conversion**: In switching power supplies and DC-DC converters, the low RDS(ON) characteristics of this MOSFET enable it to maintain high efficiency under high load conditions and reduce energy loss.
2. **Motor control**: For DC motor drive circuits, the device can effectively control the current, achieve fast startup and speed regulation, and improve the overall performance of the motor.
3. **LED drive circuit**: NTD5P06VT4G-VB can be used in LED lighting applications to help achieve efficient current regulation and control, and improve the overall efficiency and stability of the system.
4. **Battery management**: In battery charge and discharge management systems, this MOSFET can effectively control the current flow to ensure battery safety and stable performance.
5. **Power Amplifier**: In audio power amplifiers and other power applications, the NTD5P06VT4G-VB provides strong drive capability and low distortion for high-fidelity audio systems.
These application areas demonstrate the importance and wide applicability of the NTD5P06VT4G-VB in modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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