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NTD5N50T4-VB Product details

Product introduction:

NTD5N50T4-VB Product Introduction
NTD5N50T4-VB is a high voltage N-type MOSFET in TO252 package, suitable for voltage environments up to 650V. The device adopts SJ_Multi-EPI technology to ensure superior performance and reliability, suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules
The NTD5N50T4-VB is suitable for power management, LED driving, DC-DC converters and industrial automation. Its high voltage capability and low on-resistance make it very suitable for motor control, switching power supplies and various power conversion modules, providing stable performance in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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