中文
English
NTD5865NT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD5865NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium to high voltage applications. With its reasonable on-resistance and excellent switching characteristics, the device exhibits excellent performance in power management and drive circuits, and is very suitable for a variety of demanding application scenarios.
NTD5865NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium to high voltage applications. With its reasonable on-resistance and excellent switching characteristics, the device exhibits excellent performance in power management and drive circuits, and is very suitable for a variety of demanding application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
NTD5865NT4G-VB is widely used in power conversion, motor control and LED driving. In switching power supplies and DC-DC converters, the low on-resistance of this MOSFET can improve the conversion efficiency of the system and reduce heat loss. In electric vehicles and industrial automation applications, its high current handling capability ensures system stability and reliability. In addition, due to its fast response characteristics, this device is also very suitable for high-frequency switching applications, further improving system efficiency and performance.
NTD5865NT4G-VB is widely used in power conversion, motor control and LED driving. In switching power supplies and DC-DC converters, the low on-resistance of this MOSFET can improve the conversion efficiency of the system and reduce heat loss. In electric vehicles and industrial automation applications, its high current handling capability ensures system stability and reliability. In addition, due to its fast response characteristics, this device is also very suitable for high-frequency switching applications, further improving system efficiency and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
