NTD5807NG-VB Product details
Product introduction:
NTD5807NG-VB is a high-performance N-Channel MOSFET in TO251 package, designed for medium-to-high voltage and medium-current applications. Based on Trench technology, the device has relatively low on-resistance and good switching characteristics, suitable for use in a variety of power management and power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **VDS**: 40V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 14mΩ (VGS=4.5V) / 13mΩ (VGS=10V)
- **ID**: 55A
- **Technology**: Trench
Domain and module applications:
Technical support:
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