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NTD5806NG-VB Product details
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Product Introduction
NTD5806NG-VB is a high-performance N-channel MOSFET in TO251 package, designed for medium voltage and current applications. Its excellent low on-resistance and stability make it excel in the field of power management and switch control, and is suitable for electronic devices with high performance requirements.
NTD5806NG-VB is a high-performance N-channel MOSFET in TO251 package, designed for medium voltage and current applications. Its excellent low on-resistance and stability make it excel in the field of power management and switch control, and is suitable for electronic devices with high performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 4.5V: 14mΩ
- At 10V: 13mΩ
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 4.5V: 14mΩ
- At 10V: 13mΩ
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD5806NG-VB is widely used in power management systems such as DC-DC converters, switching power supplies and battery management systems, due to its low on-resistance, it improves energy efficiency. In addition, this MOSFET is also suitable for modules that require high current, such as motor drives and load switches, ensuring efficient and reliable operation, suitable for the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
