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NTD5805NT4G-VB Product details
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Product Introduction
**NTD5805NT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for high voltage applications. With its excellent conduction performance and low on-resistance, the device is suitable for high-frequency switching and power management applications. The maximum drain-source voltage of NTD5805NT4G-VB is 40V, and the maximum continuous drain current can reach 85A, which can meet a variety of power conversion and drive requirements.
**NTD5805NT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for high voltage applications. With its excellent conduction performance and low on-resistance, the device is suitable for high-frequency switching and power management applications. The maximum drain-source voltage of NTD5805NT4G-VB is 40V, and the maximum continuous drain current can reach 85A, which can meet a variety of power conversion and drive requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD5805NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench technology
- **Model**: NTD5805NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power converter**: NTD5805NT4G-VB is very effective in DC-DC converters, which can significantly improve conversion efficiency and is widely used in computer power supplies and consumer electronic devices.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in industrial automation and electric vehicles, and can handle high currents and achieve efficient control.
3. **Automotive electronics**: In automotive power management, NTD5805NT4G-VB is suitable for functions such as battery management and electric power steering, ensuring the stability of the system under various loads.
4. **LED lighting**: The fast switching capability of this MOSFET makes it excel in LED drive applications, providing efficient and stable lighting solutions.
5. **Communication equipment**: NTD5805NT4G-VB can be used for power amplification and power management in wireless communication base stations and network equipment, ensuring efficient operation under high loads.
NTD5805NT4G-VB has become an indispensable component in modern electronic design due to its excellent performance and wide range of application scenarios.
1. **Power converter**: NTD5805NT4G-VB is very effective in DC-DC converters, which can significantly improve conversion efficiency and is widely used in computer power supplies and consumer electronic devices.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in industrial automation and electric vehicles, and can handle high currents and achieve efficient control.
3. **Automotive electronics**: In automotive power management, NTD5805NT4G-VB is suitable for functions such as battery management and electric power steering, ensuring the stability of the system under various loads.
4. **LED lighting**: The fast switching capability of this MOSFET makes it excel in LED drive applications, providing efficient and stable lighting solutions.
5. **Communication equipment**: NTD5805NT4G-VB can be used for power amplification and power management in wireless communication base stations and network equipment, ensuring efficient operation under high loads.
NTD5805NT4G-VB has become an indispensable component in modern electronic design due to its excellent performance and wide range of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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