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NTD5804NG-VB Product details
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NTD5804NG-VB Product Introduction
NTD5804NG-VB is a high-performance N-channel MOSFET packaged in TO252. It uses advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of high-efficiency power management applications. Its maximum drain-source voltage (VDS) is 40V, and it can operate stably under a variety of operating conditions. In addition, the device can achieve good conduction performance at a lower gate-source voltage (VGS), further improving its applicability in power applications.
NTD5804NG-VB is a high-performance N-channel MOSFET packaged in TO252. It uses advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of high-efficiency power management applications. Its maximum drain-source voltage (VDS) is 40V, and it can operate stably under a variety of operating conditions. In addition, the device can achieve good conduction performance at a lower gate-source voltage (VGS), further improving its applicability in power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD5804NG-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: NTD5804NG-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
NTD5804NG-VB MOSFET is widely used in many fields. Here are some specific application examples:
1. **Power management**: In switching power supplies (SMPS) and power converters, NTD5804NG-VB can improve conversion efficiency and reduce energy loss due to its low RDS(ON) characteristics.
2. **Motor drive**: This MOSFET can be used in DC motor drive circuits to provide fast response and high-efficiency current control during motor start-up and speed regulation.
3. **Battery management system**: During battery charging and discharging, NTD5804NG-VB can effectively control current flow to ensure battery safety and stability.
4. **LED drive**: In LED drive circuits, using this MOSFET can achieve efficient current regulation and control to extend the service life of LEDs.
5. **Inverters and Converters**: In solar inverters and other power conversion systems, this MOSFET can be used as a switching element to help achieve efficient energy conversion.
These application areas demonstrate the importance and wide applicability of the NTD5804NG-VB in modern power electronic devices.
NTD5804NG-VB MOSFET is widely used in many fields. Here are some specific application examples:
1. **Power management**: In switching power supplies (SMPS) and power converters, NTD5804NG-VB can improve conversion efficiency and reduce energy loss due to its low RDS(ON) characteristics.
2. **Motor drive**: This MOSFET can be used in DC motor drive circuits to provide fast response and high-efficiency current control during motor start-up and speed regulation.
3. **Battery management system**: During battery charging and discharging, NTD5804NG-VB can effectively control current flow to ensure battery safety and stability.
4. **LED drive**: In LED drive circuits, using this MOSFET can achieve efficient current regulation and control to extend the service life of LEDs.
5. **Inverters and Converters**: In solar inverters and other power conversion systems, this MOSFET can be used as a switching element to help achieve efficient energy conversion.
These application areas demonstrate the importance and wide applicability of the NTD5804NG-VB in modern power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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