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NTD5407NT4G-VB Product details
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Product Introduction
**NTD5407NT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. It has a rated drain-source voltage of 40V, a reasonable threshold voltage and low on-resistance, and can provide excellent performance in a variety of electronic applications. Using Trench technology, the device ensures fast switching response and high energy efficiency, suitable for modern electronic equipment that requires high reliability.
**NTD5407NT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. It has a rated drain-source voltage of 40V, a reasonable threshold voltage and low on-resistance, and can provide excellent performance in a variety of electronic applications. Using Trench technology, the device ensures fast switching response and high energy efficiency, suitable for modern electronic equipment that requires high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD5407NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench technology
- **Model**: NTD5407NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
- NTD5407NT4G-VB is widely used in high-efficiency switching power supplies and power converters. Its low on-resistance can significantly improve system efficiency, reduce heat generation, and is suitable for operation under high load conditions.
2. **Electric vehicles**:
- In the drive system of electric vehicles and electric motorcycles, this MOSFET acts as an efficient switching element, providing fast response and high power density, optimizing overall driving performance and endurance.
3. **LED drive**:
- This device is suitable for LED drive circuits, can stably regulate LED current, ensure consistent brightness, and is widely used in lighting and display modules.
4. **DC-DC converter**:
- NTD5407NT4G-VB can be used as the main switch in the DC-DC converter, supporting efficient energy conversion, suitable for portable devices and battery-powered systems, and improving overall energy efficiency.
5. **Consumer Electronics**:
- In smart home devices and other consumer electronics, this MOSFET optimizes power management, improves the overall energy efficiency and user experience of the device, and ensures performance stability and reliability.
With its excellent performance and wide applicability, NTD5407NT4G-VB has become an indispensable component in modern electronic design.
1. **Power management**:
- NTD5407NT4G-VB is widely used in high-efficiency switching power supplies and power converters. Its low on-resistance can significantly improve system efficiency, reduce heat generation, and is suitable for operation under high load conditions.
2. **Electric vehicles**:
- In the drive system of electric vehicles and electric motorcycles, this MOSFET acts as an efficient switching element, providing fast response and high power density, optimizing overall driving performance and endurance.
3. **LED drive**:
- This device is suitable for LED drive circuits, can stably regulate LED current, ensure consistent brightness, and is widely used in lighting and display modules.
4. **DC-DC converter**:
- NTD5407NT4G-VB can be used as the main switch in the DC-DC converter, supporting efficient energy conversion, suitable for portable devices and battery-powered systems, and improving overall energy efficiency.
5. **Consumer Electronics**:
- In smart home devices and other consumer electronics, this MOSFET optimizes power management, improves the overall energy efficiency and user experience of the device, and ensures performance stability and reliability.
With its excellent performance and wide applicability, NTD5407NT4G-VB has become an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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