中文
English
NTD50N03RG-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD50N03RG-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its low on-resistance and excellent heat dissipation make it outstanding in power conversion and switching applications, and can meet stringent performance requirements.
NTD50N03RG-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its low on-resistance and excellent heat dissipation make it outstanding in power conversion and switching applications, and can meet stringent performance requirements.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 6mΩ
- At 10V: 5mΩ
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 6mΩ
- At 10V: 5mΩ
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD50N03RG-VB is widely used in power management systems such as DC-DC converters and battery management modules, featuring low on-resistance and high efficiency. In addition, this MOSFET is also suitable for motor control, load switching and other applications that require high current drive, ensuring efficient and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
