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NTD4970NT4G-VB Product details
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Product Introduction
**NTD4970NT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low to medium voltage applications. The device has excellent conduction performance and extremely low on-resistance, suitable for fast switching and high-efficiency power management applications. The maximum drain-source voltage of NTD4970NT4G-VB is 30V and the maximum continuous leakage current is 80A, ensuring its reliability in various power conversion and drive scenarios.
**NTD4970NT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low to medium voltage applications. The device has excellent conduction performance and extremely low on-resistance, suitable for fast switching and high-efficiency power management applications. The maximum drain-source voltage of NTD4970NT4G-VB is 30V and the maximum continuous leakage current is 80A, ensuring its reliability in various power conversion and drive scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4970NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
- **Model**: NTD4970NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**: NTD4970NT4G-VB is suitable for high-efficiency DC-DC converters, which can improve conversion efficiency while reducing energy loss. It is widely used in computer power supplies and consumer electronic devices.
2. **Motor control**: This MOSFET is suitable for motor drive applications such as home appliances and industrial automation systems. It can support high current operation, achieve fast response and efficient control.
3. **Automotive electronics**: In automotive power systems, NTD4970NT4G-VB can be used for applications such as battery management and electric power steering to ensure system stability and efficiency under various load conditions.
4. **LED drive circuit**: Due to its excellent switching performance, NTD4970NT4G-VB is very suitable for LED lighting driving, which can provide high-efficiency and reliable light source control.
5. **Communication base station**: In wireless communication equipment, this MOSFET can be used for power amplifiers and power management to ensure efficient operation of the equipment under high load conditions.
NTD4970NT4G-VB has become an indispensable component in modern electronic design due to its excellent performance and multiple application fields.
1. **Power management**: NTD4970NT4G-VB is suitable for high-efficiency DC-DC converters, which can improve conversion efficiency while reducing energy loss. It is widely used in computer power supplies and consumer electronic devices.
2. **Motor control**: This MOSFET is suitable for motor drive applications such as home appliances and industrial automation systems. It can support high current operation, achieve fast response and efficient control.
3. **Automotive electronics**: In automotive power systems, NTD4970NT4G-VB can be used for applications such as battery management and electric power steering to ensure system stability and efficiency under various load conditions.
4. **LED drive circuit**: Due to its excellent switching performance, NTD4970NT4G-VB is very suitable for LED lighting driving, which can provide high-efficiency and reliable light source control.
5. **Communication base station**: In wireless communication equipment, this MOSFET can be used for power amplifiers and power management to ensure efficient operation of the equipment under high load conditions.
NTD4970NT4G-VB has become an indispensable component in modern electronic design due to its excellent performance and multiple application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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