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NTD4960NT4G-VB Product details
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Product Introduction
NTD4960NT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for power management and switching applications. The device has excellent on-resistance and high current handling capability, suitable for demanding applications. Its Trench technology makes NTD4960NT4G-VB excel in high-frequency and high-efficiency operation, suitable for a variety of power electronic equipment.
NTD4960NT4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for power management and switching applications. The device has excellent on-resistance and high current handling capability, suitable for demanding applications. Its Trench technology makes NTD4960NT4G-VB excel in high-frequency and high-efficiency operation, suitable for a variety of power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples: NTD4960NT4G-VB is widely used in power management, DC-DC converters and motor drivers. Its low on-resistance characteristics can effectively reduce energy loss and improve the overall efficiency of the system in power switching applications. In addition, this MOSFET is also suitable for battery management systems, high-frequency switching circuits and other electronic devices that require fast switching performance, and can meet the requirements of modern electronic products for high performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
