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NTD4959NT4G-VB Product details
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NTD4959NT4G-VB Product Introduction
NTD4959NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for a variety of power management and drive applications. Its VDS is 30V, with good thermal performance and low on-resistance, making it excellent in high current applications. This MOSFET uses optimized Trench technology to ensure reliable performance at high frequency operation, suitable for a variety of applications in modern electronic devices.
NTD4959NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for a variety of power management and drive applications. Its VDS is 30V, with good thermal performance and low on-resistance, making it excellent in high current applications. This MOSFET uses optimized Trench technology to ensure reliable performance at high frequency operation, suitable for a variety of applications in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4959NT4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **ID (maximum drain current)**: 80A
- **Technology**: Trench
- **Model**: NTD4959NT4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **ID (maximum drain current)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: NTD4959NT4G-VB can be used in DC-DC converters and power adapters, providing low on-resistance to improve conversion efficiency, especially suitable for applications requiring high current output.
2. **Motor drive**: In motor drive circuits, this MOSFET can be used to control DC motors and stepper motors, supporting high-frequency switching operations to ensure smooth operation of the motor under different loads.
3. **Consumer electronics**: In smartphones, tablets and other consumer electronics, NTD4959NT4G-VB is used as a power switch to effectively reduce power consumption and extend battery life, improving user experience.
4. **Renewable energy**: In solar inverters and battery management systems, the high efficiency of this MOSFET enables it to effectively handle high power during power conversion, ensuring system stability and reliability.
Through these application examples, we can see the importance of NTD4959NT4G-VB in power management and drive applications, proving its wide applicability as a high-performance MOSFET.
1. **Power management**: NTD4959NT4G-VB can be used in DC-DC converters and power adapters, providing low on-resistance to improve conversion efficiency, especially suitable for applications requiring high current output.
2. **Motor drive**: In motor drive circuits, this MOSFET can be used to control DC motors and stepper motors, supporting high-frequency switching operations to ensure smooth operation of the motor under different loads.
3. **Consumer electronics**: In smartphones, tablets and other consumer electronics, NTD4959NT4G-VB is used as a power switch to effectively reduce power consumption and extend battery life, improving user experience.
4. **Renewable energy**: In solar inverters and battery management systems, the high efficiency of this MOSFET enables it to effectively handle high power during power conversion, ensuring system stability and reliability.
Through these application examples, we can see the importance of NTD4959NT4G-VB in power management and drive applications, proving its wide applicability as a high-performance MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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