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NTD4959NHT4G-VB Product details
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Product Introduction
**NTD4959NHT4G-VB** is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V and extremely low on-resistance, ensuring high efficiency and low heat generation in a variety of applications. The device uses Trench technology, with fast switching response and excellent power efficiency, meeting the high performance and reliability requirements of modern electronic devices.
**NTD4959NHT4G-VB** is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V and extremely low on-resistance, ensuring high efficiency and low heat generation in a variety of applications. The device uses Trench technology, with fast switching response and excellent power efficiency, meeting the high performance and reliability requirements of modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4959NHT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
- **Model**: NTD4959NHT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**:
- NTD4959NHT4G-VB is widely used in high-efficiency switching power supplies and power converters. With its low on-resistance, it significantly improves system efficiency, reduces energy loss, and is suitable for operation under high load conditions.
2. **Electric vehicles**:
- In the drive system of electric vehicles and electric motorcycles, this MOSFET acts as an efficient switching element, providing fast response and high power density, optimizing overall driving performance and endurance.
3. **LED drive**:
- This device is suitable for LED drive circuits, can accurately adjust LED current, ensure brightness consistency, and is widely used in lighting and display modules.
4. **DC-DC converter**:
- NTD4959NHT4G-VB can be used as the main switch in the DC-DC converter, supporting efficient energy conversion, suitable for portable electronic devices and battery-powered systems, and improving overall energy efficiency.
5. **Consumer Electronics**:
- In smart home devices and other consumer electronics, this MOSFET optimizes power management, improves the overall energy efficiency of the device, and ensures continuous stable performance and a high-quality user experience.
With its excellent performance and wide applicability, NTD4959NHT4G-VB has become an ideal choice in modern electronic design.
1. **Power management**:
- NTD4959NHT4G-VB is widely used in high-efficiency switching power supplies and power converters. With its low on-resistance, it significantly improves system efficiency, reduces energy loss, and is suitable for operation under high load conditions.
2. **Electric vehicles**:
- In the drive system of electric vehicles and electric motorcycles, this MOSFET acts as an efficient switching element, providing fast response and high power density, optimizing overall driving performance and endurance.
3. **LED drive**:
- This device is suitable for LED drive circuits, can accurately adjust LED current, ensure brightness consistency, and is widely used in lighting and display modules.
4. **DC-DC converter**:
- NTD4959NHT4G-VB can be used as the main switch in the DC-DC converter, supporting efficient energy conversion, suitable for portable electronic devices and battery-powered systems, and improving overall energy efficiency.
5. **Consumer Electronics**:
- In smart home devices and other consumer electronics, this MOSFET optimizes power management, improves the overall energy efficiency of the device, and ensures continuous stable performance and a high-quality user experience.
With its excellent performance and wide applicability, NTD4959NHT4G-VB has become an ideal choice in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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