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NTD4909NAT4G-VB Product details
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Product Introduction
NTD4909NAT4G-VB is a highly efficient N-channel MOSFET in TO252 package, designed for medium voltage and current applications. Its excellent low on-resistance and high efficiency make it excel in the field of power management and switch control, suitable for a variety of high-performance requirements.
NTD4909NAT4G-VB is a highly efficient N-channel MOSFET in TO252 package, designed for medium voltage and current applications. Its excellent low on-resistance and high efficiency make it excel in the field of power management and switch control, suitable for a variety of high-performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 6mΩ
- At 10V: 5mΩ
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V: 6mΩ
- At 10V: 5mΩ
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD4909NAT4G-VB is widely used in various power management systems, such as DC-DC converters and battery management systems, to improve energy efficiency due to its low on-resistance. In addition, this MOSFET is suitable for motor control, load switching and other high current applications, ensuring efficient and reliable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
