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NTD4906NT4G-VB Product details
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Product Introduction
**NTD4906NT4G-VB** is a high-performance N-channel MOSFET in a TO252 package designed for medium voltage applications. The device has excellent conduction performance and low on-resistance, making it excellent in high-frequency switching power supplies and power management applications. With a maximum drain-source voltage of 30V and a maximum continuous drain current of 80A, the NTD4906NT4G-VB is suitable for a variety of power conversion and drive applications.
**NTD4906NT4G-VB** is a high-performance N-channel MOSFET in a TO252 package designed for medium voltage applications. The device has excellent conduction performance and low on-resistance, making it excellent in high-frequency switching power supplies and power management applications. With a maximum drain-source voltage of 30V and a maximum continuous drain current of 80A, the NTD4906NT4G-VB is suitable for a variety of power conversion and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4906NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
- **Model**: NTD4906NT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management systems**: The low on-resistance of the NTD4906NT4G-VB makes it ideal for use in efficient DC-DC converters, which can reduce power consumption while improving overall system efficiency, and is suitable for mobile devices and computer power modules.
2. **Motor drive applications**: This MOSFET can be used in motor drive systems such as electric vehicles and industrial robots, supporting high current operation, ensuring fast response and high efficiency.
3. **Automotive electronics**: In automotive power management and electric power steering systems, the NTD4906NT4G-VB can achieve efficient power control, improving the overall performance and energy efficiency of electric vehicles.
4. **LED lighting**: Taking advantage of its fast switching characteristics, this MOSFET can be used in LED drivers to provide efficient lighting solutions suitable for a variety of commercial and domestic lighting applications.
5. **Communication equipment**: In wireless base stations and network equipment, NTD4906NT4G-VB can be used for power amplification and power management to ensure stable operation of the equipment under high load.
Through these applications, NTD4906NT4G-VB demonstrates its importance in modern electronic design.
1. **Power management systems**: The low on-resistance of the NTD4906NT4G-VB makes it ideal for use in efficient DC-DC converters, which can reduce power consumption while improving overall system efficiency, and is suitable for mobile devices and computer power modules.
2. **Motor drive applications**: This MOSFET can be used in motor drive systems such as electric vehicles and industrial robots, supporting high current operation, ensuring fast response and high efficiency.
3. **Automotive electronics**: In automotive power management and electric power steering systems, the NTD4906NT4G-VB can achieve efficient power control, improving the overall performance and energy efficiency of electric vehicles.
4. **LED lighting**: Taking advantage of its fast switching characteristics, this MOSFET can be used in LED drivers to provide efficient lighting solutions suitable for a variety of commercial and domestic lighting applications.
5. **Communication equipment**: In wireless base stations and network equipment, NTD4906NT4G-VB can be used for power amplification and power management to ensure stable operation of the equipment under high load.
Through these applications, NTD4906NT4G-VB demonstrates its importance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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