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NTD4904NT4G-VB Product details
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NTD4904NT4G-VB Product Introduction
NTD4904NT4G-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for high current and high-efficiency applications. Its VDS reaches 30V, suitable for use in a variety of power management and drive circuits. With its low on-resistance and excellent thermal performance, this MOSFET performs well in high power conversion applications and can meet the efficiency and reliability needs of modern electronic products.
NTD4904NT4G-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for high current and high-efficiency applications. Its VDS reaches 30V, suitable for use in a variety of power management and drive circuits. With its low on-resistance and excellent thermal performance, this MOSFET performs well in high power conversion applications and can meet the efficiency and reliability needs of modern electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4904NT4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench
- **Model**: NTD4904NT4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: NTD4904NT4G-VB performs well in DC-DC converters, can effectively reduce conduction losses, improve power conversion efficiency, and is suitable for various power module and charger designs.
2. **Motor drive**: This MOSFET is suitable for DC motor and stepper motor drive circuits. Its high leakage current capability ensures stable current support when the motor starts and runs.
3. **Consumer electronics**: In consumer electronics such as mobile phones and tablets, NTD4904NT4G-VB can be used as a power switch to help optimize energy efficiency and maintain reliability under high load conditions.
4. **Renewable energy**: In solar inverters and battery management systems, this MOSFET can effectively improve power conversion efficiency, support longer operating time and higher system stability.
Through these application examples, the NTD4904NT4G-VB shows its importance and wide applicability in high-efficiency circuits.
1. **Power management**: NTD4904NT4G-VB performs well in DC-DC converters, can effectively reduce conduction losses, improve power conversion efficiency, and is suitable for various power module and charger designs.
2. **Motor drive**: This MOSFET is suitable for DC motor and stepper motor drive circuits. Its high leakage current capability ensures stable current support when the motor starts and runs.
3. **Consumer electronics**: In consumer electronics such as mobile phones and tablets, NTD4904NT4G-VB can be used as a power switch to help optimize energy efficiency and maintain reliability under high load conditions.
4. **Renewable energy**: In solar inverters and battery management systems, this MOSFET can effectively improve power conversion efficiency, support longer operating time and higher system stability.
Through these application examples, the NTD4904NT4G-VB shows its importance and wide applicability in high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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