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NTD4860NAT4G-VB Product details
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NTD4860NAT4G-VB Product Introduction
NTD4860NAT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. Based on Trench technology, the device has extremely low on-resistance and good switching characteristics, suitable for a variety of power management and high power applications.
NTD4860NAT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. Based on Trench technology, the device has extremely low on-resistance and good switching characteristics, suitable for a variety of power management and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 20V
- **VGS**: ±20V
- **Vth**: 0.5~1.5V
- **RDS(ON)**: 6mΩ (VGS=2.5V) / 4.5mΩ (VGS=4.5V)
- **ID**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **VDS**: 20V
- **VGS**: ±20V
- **Vth**: 0.5~1.5V
- **RDS(ON)**: 6mΩ (VGS=2.5V) / 4.5mΩ (VGS=4.5V)
- **ID**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules: NTD4860NAT4G-VB is widely used in power management modules, including DC-DC converters, switching power supplies and LED drivers, especially for high current and low voltage applications. In addition, it is also suitable for motor control and battery management systems, especially in electric vehicles and consumer electronics. Due to its extremely low on-resistance and high current carrying capacity, this MOSFET can ensure high efficiency and reliability of the system to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
