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NTD4858NAT4G-VB Product details
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Product Introduction
**NTD4858NAT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage applications. The device has excellent switching performance and low on-resistance, making it excel in high-frequency and high-efficiency power management applications. Its operating voltage range is 20V and the maximum continuous leakage current can reach 100A, making it suitable for a variety of power conversion and management modules.
**NTD4858NAT4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage applications. The device has excellent switching performance and low on-resistance, making it excel in high-frequency and high-efficiency power management applications. Its operating voltage range is 20V and the maximum continuous leakage current can reach 100A, making it suitable for a variety of power conversion and management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NTD4858NAT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: NTD4858NAT4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management module**: Due to its low on-resistance and high current capability, NTD4858NAT4G-VB is well suited for use in DC-DC converters and high-efficiency power supplies, significantly improving system efficiency and reducing heat generation.
2. **Motor drive**: This MOSFET can be used in motor drive applications, especially in power tools, home appliances, and industrial equipment, where it can withstand large currents and switch quickly, thereby improving drive performance and response speed.
3. **Automotive electronics**: In the field of automotive electronics, NTD4858NAT4G-VB can be used for power management and power conversion applications, supporting various electronic devices in vehicles, such as electric power steering systems and battery management systems.
4. **Communication equipment**: In wireless communication and network equipment, this MOSFET can be used for signal amplification and power management, improving system reliability and stability.
5. **LED drive**: Due to its fast switching characteristics, it is suitable for LED lighting drive applications, enabling high-efficiency LED lamps.
NTD4858NAT4G-VB has become an important component in modern electronic design due to its excellent performance and wide application fields.
1. **Power management module**: Due to its low on-resistance and high current capability, NTD4858NAT4G-VB is well suited for use in DC-DC converters and high-efficiency power supplies, significantly improving system efficiency and reducing heat generation.
2. **Motor drive**: This MOSFET can be used in motor drive applications, especially in power tools, home appliances, and industrial equipment, where it can withstand large currents and switch quickly, thereby improving drive performance and response speed.
3. **Automotive electronics**: In the field of automotive electronics, NTD4858NAT4G-VB can be used for power management and power conversion applications, supporting various electronic devices in vehicles, such as electric power steering systems and battery management systems.
4. **Communication equipment**: In wireless communication and network equipment, this MOSFET can be used for signal amplification and power management, improving system reliability and stability.
5. **LED drive**: Due to its fast switching characteristics, it is suitable for LED lighting drive applications, enabling high-efficiency LED lamps.
NTD4858NAT4G-VB has become an important component in modern electronic design due to its excellent performance and wide application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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