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NTD4857NAT4G-VB Product details
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Product Introduction
NTD4857NAT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low on-resistance. Its excellent switching performance and extremely low on-resistance make it excellent in high-power applications and suitable for use in various harsh working conditions to ensure high efficiency and reliability.
NTD4857NAT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low on-resistance. Its excellent switching performance and extremely low on-resistance make it excellent in high-power applications and suitable for use in various harsh working conditions to ensure high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 3mΩ (@VGS=4.5V), 2mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 3mΩ (@VGS=4.5V), 2mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD4857NAT4G-VB is widely used in power management, DC-DC converters, motor drives and battery management systems. In power management modules, this MOSFET can achieve efficient energy conversion and reduce power loss; in DC-DC converters, it provides stable current output to ensure high efficiency; in motor drive applications, it can reliably drive high current loads and achieve efficient operation; in battery management systems, it ensures efficient charging and discharging processes to optimize energy utilization and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
