中文
English
NTD4855NT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD4855NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its low on-resistance and fast switching characteristics make it excellent in power management and drive circuits, and is very suitable for high efficiency and high load application requirements.
NTD4855NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its low on-resistance and fast switching characteristics make it excellent in power management and drive circuits, and is very suitable for high efficiency and high load application requirements.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD4855NT4G-VB is widely used in power conversion, motor drive, LED lighting and other fields. In switching power supplies and DC-DC converters, this MOSFET can significantly improve conversion efficiency and reduce heat loss, thereby improving the overall performance of the system. In electric vehicles and industrial automation systems, its high current carrying capacity enables it to meet stringent application requirements and ensure reliability and stability. In addition, due to its excellent thermal management characteristics, it can continue to work stably in harsh environments, making it very suitable for high load and high frequency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
