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NTD4806NAT4G-VB Product details
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Product Introduction
NTD4806NAT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low on-resistance applications. Its excellent switching performance and extremely low on-resistance make it excel in a variety of power management and conversion applications, suitable for use under harsh working conditions.
NTD4806NAT4G-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low on-resistance applications. Its excellent switching performance and extremely low on-resistance make it excel in a variety of power management and conversion applications, suitable for use under harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 3mΩ (@VGS=4.5V), 2mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 3mΩ (@VGS=4.5V), 2mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD4806NAT4G-VB is widely used in power management, DC-DC converters, motor drives and battery management. In power management modules, this MOSFET enables efficient energy conversion; in DC-DC converters, it provides stable current output; in motor control systems, it can reliably drive high current loads; in battery management systems, it ensures efficient charging and discharging processes to optimize energy utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
