中文
English
NTD4804NT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTD4804NT4G-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. With its extremely low on-resistance and fast switching characteristics, the device performs well in power management and drive circuits, and is very suitable for applications with extremely high efficiency and performance requirements.
NTD4804NT4G-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. With its extremely low on-resistance and fast switching characteristics, the device performs well in power management and drive circuits, and is very suitable for applications with extremely high efficiency and performance requirements.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD4804NT4G-VB is widely used in power conversion, motor drive and high-efficiency LED lighting. In switching power supplies and DC-DC converters, the low on-resistance of this MOSFET can significantly improve system efficiency and reduce heat generation. In industrial automation and electric vehicle applications, its high current carrying capacity makes it very suitable for high load conditions, ensuring reliable performance. In addition, the fast response time of the device also makes it suitable for high-frequency switching applications, further improving the overall efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
