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NTD40N03RT4G-VB Product details
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Product Introduction
NTD40N03RT4G-VB is a high performance N-channel MOSFET in TO252 package, designed for low on-resistance and high current applications. Its excellent switching performance and high efficiency make it an ideal choice for power management and conversion applications, enabling high efficiency at lower voltage conditions.
NTD40N03RT4G-VB is a high performance N-channel MOSFET in TO252 package, designed for low on-resistance and high current applications. Its excellent switching performance and high efficiency make it an ideal choice for power management and conversion applications, enabling high efficiency at lower voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 9mΩ (@VGS=4.5V), 7mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 70A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 9mΩ (@VGS=4.5V), 7mΩ (@VGS=10V)
- **ID (maximum continuous leakage current)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD40N03RT4G-VB is widely used in power management, DC-DC converters, LED drivers and motor control. In power management modules, this MOSFET can achieve efficient power conversion; in DC-DC converters, it provides stable output current; in LED driver applications, it can ensure consistent light output; and in motor control systems, it ensures efficient driving capabilities to meet various load requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
