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NTD3808NT4G-VB Product details
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Product Introduction
NTD3808NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its excellent low on-resistance and fast switching characteristics make it an ideal choice for various power management and drive circuits, especially for applications requiring high efficiency and high reliability.
NTD3808NT4G-VB is a high-performance N-Channel MOSFET in TO252 package, designed for high current and medium voltage applications. Its excellent low on-resistance and fast switching characteristics make it an ideal choice for various power management and drive circuits, especially for applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
- **Configuration**: Single N-channel
- **Package**: TO252
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTD3808NT4G-VB is widely used in power conversion, motor drive and high-efficiency LED lighting. In switching power supplies and DC-DC converters, this MOSFET can significantly improve conversion efficiency and reduce energy losses. In electric vehicles and industrial automation, its high current handling capability makes it suitable for high-load applications, ensuring system stability and reliability. At the same time, due to its excellent thermal management characteristics, it can continue to operate in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
