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NTD3055LT4G-VB Product details

Product introduction:

NTD3055LT4G-VB Product Introduction
NTD3055LT4G-VB is a high-performance N-Channel MOSFET in SOT223 package, designed for medium voltage applications. Based on Trench technology, it has low on-resistance and excellent switching characteristics, making it very suitable for high-frequency and low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 60V 1.7V 4.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
Detailed parameter description
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 85mΩ (VGS=4.5V) / 76mΩ (VGS=10V)
- **ID**: 4.5A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: NTD3055LT4G-VB is widely used in power management modules, including DC-DC converters, switching power supplies, and LED driver circuits. It is also suitable for motor control and power amplifiers in portable electronic devices and consumer electronics. With its low on-resistance and good thermal performance, this MOSFET can provide high efficiency and reliability in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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