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NTD2955VT4G-VB Product details

Product introduction:

NTD2955VT4G-VB Product Introduction
NTD2955VT4G-VB is a high-efficiency P-Channel MOSFET in TO252 package, designed for high voltage loads. With its Trench technology, the device has low on-resistance and fast switching characteristics, suitable for a variety of power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 100mΩ (VGS=4.5V) / 90mΩ (VGS=10V)
- **ID**: -30A
- **Technology**: Trench

Domain and module applications:


Application fields and modules: NTD2955VT4G-VB is widely used in power management modules, such as switching power supplies and DC-DC converters, especially for applications requiring negative voltage switches. In addition, it is suitable for battery management systems and motor drives in the automotive electronics field, and is commonly found in power amplifiers in consumer electronics. With its excellent performance, this MOSFET can meet the needs of high efficiency and reliability.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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