NTD2955VT4G-VB Product details
Product introduction:
NTD2955VT4G-VB Product Introduction
NTD2955VT4G-VB is a high-efficiency P-Channel MOSFET in TO252 package, designed for high voltage loads. With its Trench technology, the device has low on-resistance and fast switching characteristics, suitable for a variety of power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 100mΩ (VGS=4.5V) / 90mΩ (VGS=10V)
- **ID**: -30A
- **Technology**: Trench
Domain and module applications:
Application fields and modules: NTD2955VT4G-VB is widely used in power management modules, such as switching power supplies and DC-DC converters, especially for applications requiring negative voltage switches. In addition, it is suitable for battery management systems and motor drives in the automotive electronics field, and is commonly found in power amplifiers in consumer electronics. With its excellent performance, this MOSFET can meet the needs of high efficiency and reliability.
Technical support:
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