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NTD25P03-VB Product details

Product introduction:

Product Introduction
NTD25P03-VB is a high-efficiency P-Channel MOSFET in TO252 package, designed for high voltage applications. With its low on-resistance and excellent switching performance, the device is suitable for applications requiring high efficiency and high current handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -38A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description
- **Configuration**: Single P channel
- **Package**: TO252
- **VDS**: -30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -38A
- **Technology**: Trench technology

Domain and module applications:

Applications and modules: NTD25P03-VB is widely used in power management, motor control and LED driver. In portable devices and home appliances, this MOSFET can effectively reduce power consumption and heat generation, and improve overall energy efficiency. In addition, in industrial automation and electric vehicles, its excellent current carrying capacity ensures system reliability and stability, and adapts to various demanding application environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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