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NTD25P03LRLG-VB Product details

Product introduction:

Product Introduction
NTD25P03LRLG-VB is a high-efficiency P-channel MOSFET in TO252 package, designed for applications requiring low on-resistance and high current carrying capacity. Its optimized Trench technology enables it to excel in switching performance and thermal management, suitable for a variety of power management and drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -38A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 46mΩ (VGS=4.5V), 33mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -38A
- **Technology**: Trench technology

Domain and module applications:

Applications: NTD25P03LRLG-VB is widely used in power switches, motor control, load drive and other fields. In consumer electronics (such as audio equipment and home appliances), automotive electronics and industrial control systems, it effectively improves the overall performance and energy efficiency of the equipment with its low loss and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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