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NTD110N02R-001G-VB Product details
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NTD110N02R-001G-VB Product Introduction
NTD110N02R-001G-VB is a high-performance unipolar N-channel MOSFET in TO252 package, designed for low voltage and high current applications. With its extremely low on-resistance and wide threshold voltage range, the device can provide excellent performance in a variety of power management and switching applications, suitable for high frequency and high load circuits.
NTD110N02R-001G-VB is a high-performance unipolar N-channel MOSFET in TO252 package, designed for low voltage and high current applications. With its extremely low on-resistance and wide threshold voltage range, the device can provide excellent performance in a variety of power management and switching applications, suitable for high frequency and high load circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 20V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain to source voltage (VDS)**: 20V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
1. **Power management**: NTD110N02R-001G-VB performs well in switching power supplies (SMPS) and is suitable for high-efficiency power conversion and energy management, reducing power consumption and improving overall system performance.
2. **Motor drive**: The high current carrying capacity of this MOSFET makes it an ideal choice for DC motor and stepper motor drive applications, providing precise control and fast response, suitable for robots, automation equipment and other fields.
3. **LED drive circuit**: Due to its low on-resistance and wide gate voltage range, NTD110N02R-001G-VB is suitable for use in LED drive circuits to ensure efficient driving and stable brightness of LEDs, and is widely used in lighting and display devices.
4. **Battery management system**: In battery management applications, the device can safely and efficiently manage the charging and discharging process of the battery, and is particularly suitable for battery management systems in electric vehicles, renewable energy storage and mobile devices.
With its outstanding performance, NTD110N02R-001G-VB is an ideal choice for a variety of high-efficiency power applications.
1. **Power management**: NTD110N02R-001G-VB performs well in switching power supplies (SMPS) and is suitable for high-efficiency power conversion and energy management, reducing power consumption and improving overall system performance.
2. **Motor drive**: The high current carrying capacity of this MOSFET makes it an ideal choice for DC motor and stepper motor drive applications, providing precise control and fast response, suitable for robots, automation equipment and other fields.
3. **LED drive circuit**: Due to its low on-resistance and wide gate voltage range, NTD110N02R-001G-VB is suitable for use in LED drive circuits to ensure efficient driving and stable brightness of LEDs, and is widely used in lighting and display devices.
4. **Battery management system**: In battery management applications, the device can safely and efficiently manage the charging and discharging process of the battery, and is particularly suitable for battery management systems in electric vehicles, renewable energy storage and mobile devices.
With its outstanding performance, NTD110N02R-001G-VB is an ideal choice for a variety of high-efficiency power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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