NTB90N02T4G-VB Product details
Product introduction:
NTB90N02T4G-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, with excellent conduction characteristics, suitable for a variety of power electronic equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Configuration**: Single N channel
- **Package**: TO263
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications:
The NTB90N02T4G-VB is widely used in switching power supplies, DC-DC converters, and electric vehicle drive modules. Due to its extremely low on-resistance, it can effectively reduce power consumption and is particularly suitable for efficient power management and battery charging systems. In addition, this MOSFET is also suitable for motor control in power tools and home appliances to improve overall energy efficiency and system stability.
Technical support:
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