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NTB75N03RT4G-VB Product details
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Product Introduction
**NTB75N03RT4G-VB** is a high-efficiency N-channel MOSFET in TO263 package, designed for low-voltage applications. Its maximum drain-source voltage (VDS) is 30V, and the gate-source voltage (VGS) can reach ±20V, which is suitable for high-frequency switching and power management scenarios. With excellent conduction performance, especially low on-resistance at low gate voltage, NTB75N03RT4G-VB can significantly improve system efficiency and reduce energy consumption.
**NTB75N03RT4G-VB** is a high-efficiency N-channel MOSFET in TO263 package, designed for low-voltage applications. Its maximum drain-source voltage (VDS) is 30V, and the gate-source voltage (VGS) can reach ±20V, which is suitable for high-frequency switching and power management scenarios. With excellent conduction performance, especially low on-resistance at low gate voltage, NTB75N03RT4G-VB can significantly improve system efficiency and reduce energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NTB75N03RT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology
- **Model**: NTB75N03RT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Power management**: NTB75N03RT4G-VB is ideal for efficient DC-DC converters, providing excellent conduction performance under low voltage conditions and improving power conversion efficiency.
2. **Motor drive**: In motor control and drive applications, this MOSFET can be used for efficient switching operations to help achieve precise speed and torque control, and is widely used in industrial equipment.
3. **Consumer electronics**: This device can effectively reduce power consumption and extend the service life of equipment in consumer electronics products such as LED drivers and power adapters.
4. **Battery management system**: In battery management applications, NTB75N03RT4G-VB can be used for charging and discharging control to ensure safe and efficient operation of the battery.
5. **Automotive electronics**: This MOSFET provides efficient power conversion and control in automotive electronic modules, such as on-board power management and electric vehicle systems, meeting the high performance requirements of modern vehicles.
With its low on-resistance and high current handling capability, the NTB75N03RT4G-VB is an ideal choice for high-efficiency power solutions.
1. **Power management**: NTB75N03RT4G-VB is ideal for efficient DC-DC converters, providing excellent conduction performance under low voltage conditions and improving power conversion efficiency.
2. **Motor drive**: In motor control and drive applications, this MOSFET can be used for efficient switching operations to help achieve precise speed and torque control, and is widely used in industrial equipment.
3. **Consumer electronics**: This device can effectively reduce power consumption and extend the service life of equipment in consumer electronics products such as LED drivers and power adapters.
4. **Battery management system**: In battery management applications, NTB75N03RT4G-VB can be used for charging and discharging control to ensure safe and efficient operation of the battery.
5. **Automotive electronics**: This MOSFET provides efficient power conversion and control in automotive electronic modules, such as on-board power management and electric vehicle systems, meeting the high performance requirements of modern vehicles.
With its low on-resistance and high current handling capability, the NTB75N03RT4G-VB is an ideal choice for high-efficiency power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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