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NTB75N03L09T4G-VB Product details
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NTB75N03L09T4G-VB Product Introduction
NTB75N03L09T4G-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power and drive applications. With its ultra-low on-resistance (RDS(ON)), 2.7mΩ and 2.4mΩ at gate-source voltages of 4.5V and 10V respectively, it excels in thermal management and power loss, and can carry up to 98A of leakage current (ID).
NTB75N03L09T4G-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power and drive applications. With its ultra-low on-resistance (RDS(ON)), 2.7mΩ and 2.4mΩ at gate-source voltages of 4.5V and 10V respectively, it excels in thermal management and power loss, and can carry up to 98A of leakage current (ID).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NTB75N03L09T4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench
- **Model**: NTB75N03L09T4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**:
The NTB75N03L09T4G-VB is ideal for use in DC-DC converters and high-efficiency power modules, achieving excellent power conversion efficiency at low power consumption and reducing heat loss.
2. **Power tools**:
In power tools, this device can be used for motor drive control, effectively improving tool performance and battery life with its high current carrying capacity and low on-resistance.
3. **Consumer electronics**:
This MOSFET can be used in power management systems for consumer electronics such as smartphones and tablets, ensuring fast charging and high-efficiency power output.
4. **LED driver**:
The NTB75N03L09T4G-VB can be used in LED lighting and driver circuits, meeting various lighting needs with its high efficiency and stability.
Through these applications, NTB75N03L09T4G-VB demonstrates its important role in a variety of modern power management and drive technologies.
1. **Power management**:
The NTB75N03L09T4G-VB is ideal for use in DC-DC converters and high-efficiency power modules, achieving excellent power conversion efficiency at low power consumption and reducing heat loss.
2. **Power tools**:
In power tools, this device can be used for motor drive control, effectively improving tool performance and battery life with its high current carrying capacity and low on-resistance.
3. **Consumer electronics**:
This MOSFET can be used in power management systems for consumer electronics such as smartphones and tablets, ensuring fast charging and high-efficiency power output.
4. **LED driver**:
The NTB75N03L09T4G-VB can be used in LED lighting and driver circuits, meeting various lighting needs with its high efficiency and stability.
Through these applications, NTB75N03L09T4G-VB demonstrates its important role in a variety of modern power management and drive technologies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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