中文
English
NTB65N02RT4G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NTB65N02RT4G-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage is 30V, with a leakage current capability of up to 70A, and excellent on-resistance (RDS(ON) is 8mΩ@VGS=4.5V, 6mΩ@VGS=10V), which enables it to minimize energy loss during switching, making it very suitable for power management and drive applications.
NTB65N02RT4G-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage is 30V, with a leakage current capability of up to 70A, and excellent on-resistance (RDS(ON) is 8mΩ@VGS=4.5V, 6mΩ@VGS=10V), which enables it to minimize energy loss during switching, making it very suitable for power management and drive applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 8mΩ@VGS=4.5V, 6mΩ@VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 8mΩ@VGS=4.5V, 6mΩ@VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules
NTB65N02RT4G-VB has a wide range of applications in multiple industries and modules, with specific examples as follows:
- **Switching power supply**: In switching power supply design, this MOSFET can be used as the main switching element to optimize power conversion efficiency and ensure stable output of voltage and current.
- **Motor drive**: Suitable for motor control applications, it can provide fast and efficient current management, improving the response speed and performance of the drive system.
- **LED drive**: In LED lighting systems, this MOSFET can be used to drive LEDs, ensuring high efficiency and long life of the light source while reducing heat generation.
- **Portable electronic devices**: Used in mobile devices and consumer electronics, it provides efficient solutions for battery power management and power conversion, extending battery life and improving device performance.
NTB65N02RT4G-VB has a wide range of applications in multiple industries and modules, with specific examples as follows:
- **Switching power supply**: In switching power supply design, this MOSFET can be used as the main switching element to optimize power conversion efficiency and ensure stable output of voltage and current.
- **Motor drive**: Suitable for motor control applications, it can provide fast and efficient current management, improving the response speed and performance of the drive system.
- **LED drive**: In LED lighting systems, this MOSFET can be used to drive LEDs, ensuring high efficiency and long life of the light source while reducing heat generation.
- **Portable electronic devices**: Used in mobile devices and consumer electronics, it provides efficient solutions for battery power management and power conversion, extending battery life and improving device performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
