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NTB6411ANT4G-VB Product details
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NTB6411ANT4G-VB Product Introduction
NTB6411ANT4G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high efficiency and high power applications. The device can withstand a maximum drain-source voltage (VDS) of 100V and has a continuous drain current (ID) of up to 100A, suitable for applications requiring high current and low on-resistance. It has excellent RDS(ON) values of 23mΩ (VGS=4.5V) and 10mΩ (VGS=10V), which makes it excellent in power loss and thermal management.
NTB6411ANT4G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high efficiency and high power applications. The device can withstand a maximum drain-source voltage (VDS) of 100V and has a continuous drain current (ID) of up to 100A, suitable for applications requiring high current and low on-resistance. It has excellent RDS(ON) values of 23mΩ (VGS=4.5V) and 10mΩ (VGS=10V), which makes it excellent in power loss and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NTB6411ANT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: NTB6411ANT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**:
NTB6411ANT4G-VB can be widely used in power switching circuits, such as DC-DC converters and AC-DC adapters. With its low on-resistance and high current carrying capacity, it can effectively improve power efficiency and reduce heat loss.
2. **Electric vehicles**:
In the drive control system of electric vehicles, this MOSFET can effectively control the current of the motor, provide efficient energy conversion, and improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**:
This device is suitable for power drive applications in industrial equipment, such as motor drive and automation control systems, and can meet the requirements of stable operation under high load conditions.
4. **Consumer electronics**:
In consumer electronics products, such as smartphone chargers and portable power management modules, NTB6411ANT4G-VB can provide efficient power solutions to meet the needs of fast charging and high efficiency.
Through these application examples, we can see that NTB6411ANT4G-VB can perform excellently in many fields and meet the needs of modern power supply and drive technology.
1. **Power management**:
NTB6411ANT4G-VB can be widely used in power switching circuits, such as DC-DC converters and AC-DC adapters. With its low on-resistance and high current carrying capacity, it can effectively improve power efficiency and reduce heat loss.
2. **Electric vehicles**:
In the drive control system of electric vehicles, this MOSFET can effectively control the current of the motor, provide efficient energy conversion, and improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**:
This device is suitable for power drive applications in industrial equipment, such as motor drive and automation control systems, and can meet the requirements of stable operation under high load conditions.
4. **Consumer electronics**:
In consumer electronics products, such as smartphone chargers and portable power management modules, NTB6411ANT4G-VB can provide efficient power solutions to meet the needs of fast charging and high efficiency.
Through these application examples, we can see that NTB6411ANT4G-VB can perform excellently in many fields and meet the needs of modern power supply and drive technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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