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NTB5860NT4G-VB Product details
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NTB5860NT4G-VB Product Introduction
The NTB5860NT4G-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. With its excellent on-resistance (RDS(ON)), which is 12mΩ at VGS of 4.5V and drops to 3.2mΩ at VGS of 10V, it is ideal for low power and high efficiency applications. Its maximum drain current (ID) can reach 210A, suitable for applications requiring high current carrying capacity.
The NTB5860NT4G-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. With its excellent on-resistance (RDS(ON)), which is 12mΩ at VGS of 4.5V and drops to 3.2mΩ at VGS of 10V, it is ideal for low power and high efficiency applications. Its maximum drain current (ID) can reach 210A, suitable for applications requiring high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NTB5860NT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench
- **Model**: NTB5860NT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: NTB5860NT4G-VB can be used in switch mode power supply (SMPS) design to provide efficient current control and optimize power conversion efficiency.
2. **Electric vehicles**: Due to its high current carrying capacity, this MOSFET is widely used in the power management system of electric vehicles, especially in battery management and motor drive modules.
3. **Consumer electronics**: It can be used for efficient battery chargers and power amplifiers to improve the performance and endurance of the equipment.
4. **Industrial control**: In industrial automation equipment, NTB5860NT4G-VB can be used in electric actuators and motor drivers to provide fast switching and low heat loss characteristics.
5. **LED driver**: In LED lighting and drive circuits, using this MOSFET can achieve efficient current regulation, extend the life of the LED and improve the brightness.
1. **Power management**: NTB5860NT4G-VB can be used in switch mode power supply (SMPS) design to provide efficient current control and optimize power conversion efficiency.
2. **Electric vehicles**: Due to its high current carrying capacity, this MOSFET is widely used in the power management system of electric vehicles, especially in battery management and motor drive modules.
3. **Consumer electronics**: It can be used for efficient battery chargers and power amplifiers to improve the performance and endurance of the equipment.
4. **Industrial control**: In industrial automation equipment, NTB5860NT4G-VB can be used in electric actuators and motor drivers to provide fast switching and low heat loss characteristics.
5. **LED driver**: In LED lighting and drive circuits, using this MOSFET can achieve efficient current regulation, extend the life of the LED and improve the brightness.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
