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NTB4N80-VB Product details
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NTB4N80-VB Product Introduction
NTB4N80-VB is a high voltage N-type MOSFET, using TO263 package, designed for high voltage applications, and can withstand drain-source voltages up to 800V. The SJ_Multi-EPI technology it uses enables it to maintain excellent conduction performance under high voltage conditions, and is suitable for various high voltage power supplies and power conversion applications. The characteristics of this product enable it to perform well in situations requiring high voltage resistance and high reliability.
NTB4N80-VB is a high voltage N-type MOSFET, using TO263 package, designed for high voltage applications, and can withstand drain-source voltages up to 800V. The SJ_Multi-EPI technology it uses enables it to maintain excellent conduction performance under high voltage conditions, and is suitable for various high voltage power supplies and power conversion applications. The characteristics of this product enable it to perform well in situations requiring high voltage resistance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package**: TO263
- **Configuration**: Single N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules
NTB4N80-VB has a wide range of applications in multiple fields. First, it is very suitable for high-voltage switching power supplies (SMPS) and inverters, such as solar inverters and wind power generation systems. In the field of electric vehicles, NTB4N80-VB can be used in power management systems to ensure high efficiency and safety. In addition, it can also be used in power conditioning modules and high-voltage drive circuits in industrial automation equipment to meet the needs of high-voltage applications and provide reliable performance and durability.
NTB4N80-VB has a wide range of applications in multiple fields. First, it is very suitable for high-voltage switching power supplies (SMPS) and inverters, such as solar inverters and wind power generation systems. In the field of electric vehicles, NTB4N80-VB can be used in power management systems to ensure high efficiency and safety. In addition, it can also be used in power conditioning modules and high-voltage drive circuits in industrial automation equipment to meet the needs of high-voltage applications and provide reliable performance and durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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