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NTB45N06T4G-VB Product details
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Product Introduction
**NTB45N06T4G-VB** is a high-performance single N-channel MOSFET in TO263 package with excellent electrical characteristics and high efficiency. This device is particularly suitable for applications requiring high switching speed and low conduction loss, and is suitable for use in a variety of power management and conversion circuits.
**NTB45N06T4G-VB** is a high-performance single N-channel MOSFET in TO263 package with excellent electrical characteristics and high efficiency. This device is particularly suitable for applications requiring high switching speed and low conduction loss, and is suitable for use in a variety of power management and conversion circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NTB45N06T4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: NTB45N06T4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: NTB45N06T4G-VB is commonly used in switch mode power supplies (SMPS) as the main switching element to improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drive control circuits, this MOSFET can respond quickly and provide reliable switching performance, suitable for driving DC and stepper motors.
3. **Battery management system**: This device provides low conduction losses during battery charging and discharging, ensuring efficient operation of the system and extending battery life.
4. **LED drive circuit**: In LED lighting systems, NTB45N06T4G-VB is used to efficiently drive LED lamps and optimize power conversion efficiency.
5. **Voltage converter**: Suitable for various DC-DC converter circuits, supporting stable output under high load conditions.
Through its low on-resistance and high current capability, the NTB45N06T4G-VB meets the needs of modern electronic devices for high performance and miniaturization.
1. **Power management**: NTB45N06T4G-VB is commonly used in switch mode power supplies (SMPS) as the main switching element to improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drive control circuits, this MOSFET can respond quickly and provide reliable switching performance, suitable for driving DC and stepper motors.
3. **Battery management system**: This device provides low conduction losses during battery charging and discharging, ensuring efficient operation of the system and extending battery life.
4. **LED drive circuit**: In LED lighting systems, NTB45N06T4G-VB is used to efficiently drive LED lamps and optimize power conversion efficiency.
5. **Voltage converter**: Suitable for various DC-DC converter circuits, supporting stable output under high load conditions.
Through its low on-resistance and high current capability, the NTB45N06T4G-VB meets the needs of modern electronic devices for high performance and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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