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NTB30N20T4G-VB Product details
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NTB30N20T4G-VB Product Introduction
NTB30N20T4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. It has low on-resistance and excellent switching characteristics, suitable for use in efficient power management and signal control circuits. With its superior performance and reliability, NTB30N20T4G-VB has become an indispensable component in modern electronic devices.
NTB30N20T4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. It has low on-resistance and excellent switching characteristics, suitable for use in efficient power management and signal control circuits. With its superior performance and reliability, NTB30N20T4G-VB has become an indispensable component in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
NTB30N20T4G-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In high-voltage power converters, NTB30N20T4G-VB can be used as a switching element to efficiently convert and regulate voltage, ensuring the stability and efficiency of the power system.
2. **Motor drive**: This MOSFET can be used in motor control circuits to regulate the operating state of the motor through fast switching, and is widely used in industrial automation equipment and electric vehicles.
3. **Inverter**: NTB30N20T4G-VB is suitable for solar inverters and other renewable energy applications, which can effectively manage power and improve system efficiency.
4. **LED drive circuit**: In LED lighting systems, NTB30N20T4G-VB can control the switching and brightness of LEDs, improve lighting effects and extend service life.
5. **High-power electronics**: Suitable for a variety of high-power applications, including battery management systems and power amplifiers, ensuring stability and safety under high-load conditions.
The high voltage handling capability and excellent conduction characteristics of the NTB30N20T4G-VB make it an ideal choice for a variety of electronic applications to meet the ever-changing market needs.
NTB30N20T4G-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In high-voltage power converters, NTB30N20T4G-VB can be used as a switching element to efficiently convert and regulate voltage, ensuring the stability and efficiency of the power system.
2. **Motor drive**: This MOSFET can be used in motor control circuits to regulate the operating state of the motor through fast switching, and is widely used in industrial automation equipment and electric vehicles.
3. **Inverter**: NTB30N20T4G-VB is suitable for solar inverters and other renewable energy applications, which can effectively manage power and improve system efficiency.
4. **LED drive circuit**: In LED lighting systems, NTB30N20T4G-VB can control the switching and brightness of LEDs, improve lighting effects and extend service life.
5. **High-power electronics**: Suitable for a variety of high-power applications, including battery management systems and power amplifiers, ensuring stability and safety under high-load conditions.
The high voltage handling capability and excellent conduction characteristics of the NTB30N20T4G-VB make it an ideal choice for a variety of electronic applications to meet the ever-changing market needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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