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NTB23N03RT4G-VB Product details
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Product Introduction
NTB23N03RT4G-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for a variety of power management and switching applications. Its low on-resistance and high current carrying capacity make it excel in high frequency and high power applications.
NTB23N03RT4G-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for a variety of power management and switching applications. Its low on-resistance and high current carrying capacity make it excel in high frequency and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V, 12mΩ@VGS=10V
- **Continuous leakage current (ID)**: 50A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V, 12mΩ@VGS=10V
- **Continuous leakage current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: NTB23N03RT4G-VB is widely used in DC-DC converters, switching power supplies, and motor drive circuits. Its low on-resistance makes it particularly suitable for power management solutions that require high efficiency, such as in battery-powered devices and power adapters, which can effectively reduce energy losses. In addition, this MOSFET can also be used in LED drive circuits and automotive electronic systems to provide reliable switching control and optimized performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
